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| SMD Type Silicon PNP Epitaxial 2SB906 TO-252 +0.15 1.50 -0.15 Transistors Features Low collector saturation voltage. High power dissipation. Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0.1 0.60-0.1 +0.28 1.50 -0.1 +0.25 2.65 -0.1 +0.15 5.55 -0.15 1 Base 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -60 -60 -7 -3 -0.5 1 150 -55 to +150 Unit V V V mA mA mW Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Turn-on time Storage time Fall time Symbol ICBO IEBO Testconditons VCB = -60 V, IE = 0 VEB = -7 V, IC = 0 -60 60 20 -1 -1 9 150 0.4 -IB1=IB2=0.2A,VCC=-30V,duty cycle1% 1.7 0.5 -1.7 -1.5 V V MHz pF is is is 200 Min Typ Max -100 -100 Unit iA iA V V(BR)CEO IC=-50mA, IB=0 hFE VCE = -5 V, IC = -0.5 A VCE = -5 V, IC = -3 A VCE (sat) IC = -3 A, IB = -0.3 A VBE fT Cob ton tstg tf VCE = -5V, IC =-0.5 A VCE = -5V, IC =-0.5 A VCB = -10V, IE = 0, f = 1 MHz hFE Classification Rank hFE O 60 120 Y 100 200 3.80 www.kexin.com.cn 1 |
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